MODELING OF THERMAL-OXIDATION OF SILICON

被引：3

作者：

SINGH, SK

SCHLUP, JR

FAN, LT

SUR, B

机构：

[1] KANSAS STATE UNIV AGR & APPL SCI, DEPT CHEM ENGN, DURLAND HALL, MANHATTAN, KS 66506 USA

[2] KANSAS STATE UNIV AGR & APPL SCI, DEPT MECH ENGN, MANHATTAN, KS 66506 USA

来源：

关键词：

D O I：

10.1021/ie00081a024

中图分类号：

TQ [化学工业];

学科分类号：

0817 ;

摘要：

引用

页码：1707 / 1714

页数：8

共 26 条

[1]

ABRAMOWITZ M, 1964, APPLIED MATH SERIES, V55, P299

[2]

BARIN I, 1973, THERMOCHEMICAL PROPE, P689

[3]

Bird R.B., 1960, TRANSPORT PHENOMENA, P352

[4] REVISED MODEL FOR OXIDATION OF SI BY OXYGEN [J].

BLANC, J .

[5]

CARSLAW HS, 1959, CONDUCTION HEAT SOLI, P62

[6]

Crank J., 1957, Q J MECH APPL MATH, V10, P220

[7]

Crank J., 1975, The mathematics of di usion, V2nd, P32

[8] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J].

DEAL, BE ;

GROVE, AS .

[9]

DUTTON RW, 1978, MOVING BOUNDARY PROB, P233

[10]

GHANDHI SK, 1983, VLSI FABRICATION PRI, P370