CATION AND ANION IDEAL VACANCY INDUCED GAP LEVELS IN SOME III-V COMPOUND SEMICONDUCTORS

被引：0

作者：

DASSARMA, S ^{[1
]}

MADHUKAR, A ^{[1
]}

机构：

[1] UNIV SO CALIF,DEPT PHYS,LOS ANGELES,CA 90007

来源：

SOLID STATE COMMUNICATIONS | 1981年 / 38卷 / 03期

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中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

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页码：183 / 186

页数：4

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