PHASE-AMPLITUDE COUPLING FACTOR OF LASER-DIODES WITH SATURABLE ABSORBER

被引:0
作者
STELMAKH, N
LOURTIOZ, JM
PASCAL, D
CAVELIER, M
机构
来源
ANNALES DES TELECOMMUNICATIONS-ANNALS OF TELECOMMUNICATIONS | 1992年 / 47卷 / 9-10期
关键词
SEMICONDUCTOR LASER; SATURABLE ABSORBER; SPECTRAL LINE BROADENING; FREQUENCY SHIFT; PULSE BEHAVIOR; SPECTROMETRY; Q-SWITCHED LASER;
D O I
暂无
中图分类号
TN [电子技术、通信技术];
学科分类号
0809 ;
摘要
The phase-amplitude coupling factor (alpha-factor) is one of the fundamental parameters of semiconductor lasers. We show that this factor can be evaluated by time-resolved spectroscopic measurements in pulsed regime. Experiments are carried out with injection-seeded single-mode GaAs lasers whose active stripe includes regions of saturable absorption made by ion implantation. We show that the measured pulse downchirp is proportional to pulse energy. The downchirp amplitude is found to approach four laser cavity intermode spacings at the highest energies. Correspondingly, the alpha-values can be five times higher than those reported to date in litterature. High alpha-values are confirmed in pulse compression experiments. Several mechanisms are proposed to interprete these new results.
引用
收藏
页码:370 / 376
页数:7
相关论文
共 17 条
[1]  
Agrawal G. P., 1989, IEEE Photonics Technology Letters, V1, P212, DOI 10.1109/68.36045
[3]   GAIN COMPRESSION AND PHASE-AMPLITUDE COUPLING IN GAINAS QUANTUM-WELL LASERS WITH 3, 5 AND 7 WELLS [J].
CAVELIER, M ;
LOURTIOZ, JM ;
XIE, JM ;
CHUSSEAU, L ;
DECREMOUX, B ;
KRAWKOWSKI, M ;
RONDI, D .
ELECTRONICS LETTERS, 1991, 27 (06) :513-515
[4]   BANDWITH-LIMITED 0.3W PICOSECOND PULSES (4PS) FROM A 1.53-MU-M MICROWAVE MODULATED DFB LASER WITH FIBER COMPRESSION [J].
CHUSSEAU, L ;
XIE, JM ;
DUVILLARET, L ;
LOURTIOZ, JM ;
ACCARD, A ;
HEBERT, JP .
ELECTRONICS LETTERS, 1990, 26 (14) :1085-1087
[5]   ANALYSIS OF THE PHASE-AMPLITUDE COUPLING FACTOR AND SPECTRAL LINEWIDTH OF DISTRIBUTED FEEDBACK AND COMPOSITE-CAVITY SEMICONDUCTOR-LASERS [J].
DUAN, GH ;
GALLION, P ;
DEBARGE, G .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1990, 26 (01) :32-44
[6]   GAIN SPECTRA IN GAAS DOUBLE-HETEROSTRUCTURE INJECTION LASERS [J].
HAKKI, BW ;
PAOLI, TL .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (03) :1299-1306
[7]   MEASUREMENT OF THE LINEWIDTH ENHANCEMENT FACTOR-ALPHA OF SEMICONDUCTOR-LASERS [J].
HARDER, C ;
VAHALA, K ;
YARIV, A .
APPLIED PHYSICS LETTERS, 1983, 42 (04) :328-330
[8]   THEORY OF THE LINEWIDTH OF SEMICONDUCTOR-LASERS [J].
HENRY, CH .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (02) :259-264
[9]   LINEWIDTH ENHANCEMENT FACTOR OF 1.3-MU M INGAASP INP STRAINED-LAYER MULTIPLE-QUANTUM-WELL DFB LASERS [J].
KANO, F ;
YOSHIKUNI, Y ;
FUKUDA, M ;
YOSHIDA, J .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (10) :877-879
[10]   NATURE OF WAVELENGTH CHIRPING IN DIRECTLY MODULATED SEMICONDUCTOR-LASERS [J].
KOCH, TL ;
BOWERS, JE .
ELECTRONICS LETTERS, 1984, 20 (25-2) :1038-1040