PREPARATION AND PROPERTIES OF BI4TI3O12 SINGLE-CRYSTAL THIN-FILMS BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION

被引：33

作者：

WANG, H

FU, LW

SHANG, SX

机构：

[1] SHANDONG UNIV,INST CRYSTAL,JINAN 250100,PEOPLES R CHINA

[2] SHANDONG UNIV,DEPT OPT,JINAN 250100,PEOPLES R CHINA

[3] SHANDONG UNIV,CTR EXPTL,JINAN 250100,PEOPLES R CHINA

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 73卷 / 11期

关键词：

D O I：

10.1063/1.353929

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Bismuth titanate (Bi4Ti3O12) thin films have been grown on (100) silicon substrates at 550-degrees-C by atmospheric Pressure metalorganic chemical vapor deposition using Bi (C6H5)3 and Ti (OC4H9)4 as the source materials. The x-ray diffraction analysis and reflection electron diffraction pattern revealed that the film is a single crystal with a (100) orientation. Ferroelectric properties were confirmed by polarization hysteresis curve observation. The remanent polarization and coercive field were found to be 38 muC/CM2 and 45 kV/cm, respectively. The measured dielectric constant and loss tangent were 93 and 0.05, respectively, at room temperature.

引用

页码：7963 / 7965

页数：3

共 8 条

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[2]

CUMMINS SE, 1969, J APPL PHYS, V33, P2268

[3] STRUCTURAL AND OPTICAL-PROPERTIES OF FERROELECTRIC BI4TI3O12 THIN-FILMS BY SOL-GEL TECHNIQUE [J].