STRUCTURE OF THE K ADSORBED SI(001)2X1 SURFACE STUDIED BY LEED

被引：18
|
作者：
URANO, T
UCHIDA, Y
HONGO, S
KANAJI, T
机构：
[1] Faculty of Engineering, Kobe University, Kobe, 657, Rokko-dai, Nada
来源：
SURFACE SCIENCE | 1991年 / 242卷 / 1-3期
关键词：
D O I：
10.1016/0039-6028(91)90238-N
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The surface structures of K adsorbed Si(001))2 x 1 surfaces have been studied by the dynamical analysis of low-energy electron diffraction (LEED) beam intensity versus electron energy curves (the so-called I-V curves). A reliability factor (R-factor) analysis has been carried out for three models of the site of the K atoms, that is, a pedestal site model (Levine's model), a double layer model, and a cave site model. Although the difference of the numerical value of R is not so large among these models, the double layer model indicates the smallest value within a symmetric dimer model of the topmost Si atoms.
引用
收藏
页码：39 / 44
页数：6
相关论文
共 50 条
  • [21] SURFACE VIBRATIONAL EXCITATIONS ON SI(001)2X1
    ALLAN, DC
    MELE, EJ
    PHYSICAL REVIEW LETTERS, 1984, 53 (08) : 826 - 829
  • [22] Initial oxynitridation of a Si(001)-2x1 surface by NO
    Miyata, N
    Watanabe, H
    Ichikawa, M
    STRUCTURE AND ELECTRONIC PROPERTIES OF ULTRATHIN DIELECTRIC FILMS ON SILICON AND RELATED STRUCTURES, 2000, 592 : 233 - 238
  • [23] SURFACE X-RAY-DIFFRACTION STUDY ON THE SI(001)2X1 STRUCTURE
    TAKAHASI, M
    NAKATANI, S
    ITO, Y
    TAKAHASHI, T
    ZHANG, XW
    ANDO, M
    SURFACE SCIENCE, 1995, 338 (1-3) : L846 - L850
  • [24] ATOMIC-STRUCTURE OF SI[001]2X1
    YANG, WS
    JONA, F
    MARCUS, PM
    PHYSICAL REVIEW B, 1983, 28 (04): : 2049 - 2059
  • [25] ADSORBATE STRUCTURE AND SUBSTRATE RELAXATION FOR THE SB/SI(001)-(2X1) SURFACE
    LYMAN, PF
    QIAN, Y
    BEDZYK, MJ
    SURFACE SCIENCE, 1995, 325 (1-2) : L385 - L391
  • [26] ATOMIC AND ELECTRONIC-STRUCTURE OF THE NA/SI(001)-(2X1) SURFACE
    BATRA, IP
    PHYSICAL REVIEW B, 1989, 39 (06): : 3919 - 3922
  • [27] Domain wall structure of Te/Si(001) surface studied by LEED
    Ohtani, T
    Tamiya, K
    Takeda, Y
    Urano, T
    Hongo, S
    APPLIED SURFACE SCIENCE, 1998, 130 : 112 - 117
  • [28] Domain wall structure of Te/Si(001) surface studied by LEED
    Ohtani, T.
    Tamiya, K.
    Takeda, Y.
    Urano, T.
    Hongo, S.
    Applied Surface Science, 1998, 130-132 : 112 - 117
  • [29] Etching behavior of Si(001)-2x1 studied with optical anisotropy
    Wentink, DJ
    Kuijper, M
    Wormeester, H
    vanSilfhout, A
    PHYSICAL REVIEW B, 1997, 56 (12): : 7679 - 7686
  • [30] MEASUREMENT OF OVERLAYER-PLASMON DISPERSION IN K-CHAINS ADSORBED ON SI(001)2X1
    ARUGA, T
    TOCHIHARA, H
    MURATA, Y
    PHYSICAL REVIEW LETTERS, 1984, 53 (04) : 372 - 375
12345