ELECTROLUMINESCENCE FROM SULFUR IMPURITIES IN A P-N-JUNCTION FORMED IN EPITAXIAL SILICON

被引：31
作者：
BRADFIELD, PL
BROWN, TG
HALL, DG
机构：
来源：
APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 02期
关键词：
D O I：
10.1063/1.102115
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：100 / 102
页数：3
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