REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION AND SCANNING TUNNELING MICROSCOPY STUDY OF SINGLE-DOMAIN GROWTH DURING SILICON MOLECULAR-BEAM EPITAXY ON SI(001)

被引：27
作者：
HOEVEN, AJ
VANLOENEN, EJ
DIJKKAMP, D
LENSSINCK, JM
DIELEMAN, J
机构：
来源：
THIN SOLID FILMS | 1989年 / 183卷
关键词：
D O I：
10.1016/0040-6090(89)90451-3
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：263 / 271
页数：9
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