MICRODEFECTS AND STRIATIONS IN DISLOCATION-FREE LEC-GAP CRYSTALS

被引:22
作者
DEKOCK, AJR [1 ]
VANDEWIJGERT, WM [1 ]
HENGST, JHT [1 ]
ROKSNOER, PJ [1 ]
HUYBREGTS, JMPL [1 ]
机构
[1] PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
关键词
D O I
10.1016/0022-0248(77)90089-6
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:13 / 28
页数:16
相关论文
共 35 条
[1]  
AMELINCKX S, REPORT LAKE PLACID C, P3
[2]  
Bass S. J., 1968, Journal of Crystal Growth, V3-4Spe, P286, DOI 10.1016/0022-0248(68)90155-3
[3]  
CARRUTHERS JR, 1975, CRYSTAL GROWTH CHARA
[4]   CHARACTERIZATION OF DEFECTS IN GAP AND GAASP GRADED HETEROJUNCTIONS BY TRANSMISSION ELECTRON-MICROSCOPY [J].
DUPUY, M ;
LAFEUILLE, D .
JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) :244-249
[5]   FORMATION AND NATURE OF SWIRL DEFECTS IN SILICON [J].
FOLL, H ;
KOLBESEN, BO .
APPLIED PHYSICS, 1975, 8 (04) :319-331
[6]  
FOLL H, 1976, THESIS U STUTTGART
[7]   DISLOCATION LOOPS IN QUENCHED ALUMINIUM [J].
HIRSCH, PB ;
SILCOX, J ;
SMALLMAN, RE ;
WESTMACOTT, KH .
PHILOSOPHICAL MAGAZINE, 1958, 3 (32) :897-&
[9]   DETERMINATION OF SOLIDUS AND GALLIUM AND PHOSPHORUS VACANCY CONCENTRATIONS IN GAP [J].
JORDAN, AS ;
VONNEIDA, AR ;
CARUSO, R ;
KIM, CK .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (01) :153-158
[10]  
KOCK AJR, 1975, J CRYST GROWTH, V30, P279