GLOW-DISCHARGE-IMPLANTED, THERMALLY ANNEALED, OXIDE-PASSIVATED SILICON SOLAR-CELLS OF 19-PERCENT EFFICIENCY

[1] ION IMPLANTATION AS A PRODUCTION TECHNIQUE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (01) : 10 - +

[2] 19.1-PERCENT EFFICIENT SILICON SOLAR-CELL [J]. APPLIED PHYSICS LETTERS, 1984, 44 (12) : 1163 - 1164

[3] PULSED-ELECTRON-BEAM ANNEALING OF ION-IMPLANTATION DAMAGE [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) : 783 - 787

[4] GUSEV VM, 1966, FIZ TVERD TELA+, V8, P1363

[5] JELLISON GE, 1986, IN PRESS SOLAR CELLS, V18, P93

[6] JELLISON GE, 1980, NASA C PUBLICATION, V2169

[7] Kirkpatrick A. R., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P706

[8] Muller J. C., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P711

[9] ROHATGI A, 1984, DEC SEM ANN PROGR RE

[10] HIGH-EFFICIENCY ION-IMPLANTED SILICON SOLAR-CELLS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (05) : 546 - 550

[1] ION IMPLANTATION AS A PRODUCTION TECHNIQUE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (01) : 10 - +

[2] 19.1-PERCENT EFFICIENT SILICON SOLAR-CELL [J]. APPLIED PHYSICS LETTERS, 1984, 44 (12) : 1163 - 1164

[3] PULSED-ELECTRON-BEAM ANNEALING OF ION-IMPLANTATION DAMAGE [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) : 783 - 787

[4] GUSEV VM, 1966, FIZ TVERD TELA+, V8, P1363

[5] JELLISON GE, 1986, IN PRESS SOLAR CELLS, V18, P93

[6] JELLISON GE, 1980, NASA C PUBLICATION, V2169

[7] Kirkpatrick A. R., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P706

[8] Muller J. C., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P711

[9] ROHATGI A, 1984, DEC SEM ANN PROGR RE

[10] HIGH-EFFICIENCY ION-IMPLANTED SILICON SOLAR-CELLS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (05) : 546 - 550