APPLICATION OF INTERFACE DEMARCATION TO MULTIPHASE SYSTEMS - INSB-SB EUTECTIC

被引：5

作者：

HOLMES, DE ^{[1
]}

GATOS, HC ^{[1
]}

机构：

[1] MIT,DEPT MAT SCI & ENGN,CAMBRIDGE,MA 02139

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1978年 / 125卷 / 11期

关键词：

D O I：

10.1149/1.2131313

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1873 / 1875

页数：3

共 11 条

[1]

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[2]

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[3]

HOLMES DE, 1977, THESIS MIT

[4]

Hurle D. T. J., 1968, Journal of Crystal Growth, V3-4Spe, P574, DOI 10.1016/0022-0248(68)90226-1

[5]

JACKSON KA, 1966, T METALL SOC AIME, V236, P1129

[6]

JACKSON KA, 1966, T AIME, V236, P843

[7] CRYSTAL-GROWTH FROM MELT UNDER DESTABILIZING THERMAL GRADIENTS [J].

KIM, KM ;

WITT, AF ;

GATOS, HC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (09) :1218-&

[8] QUANTITATIVE-ANALYSIS OF EFFECTS OF DESTABILIZING VERTICAL THERMAL GRADIENTS ON CRYSTAL-GROWTH AND SEGREGATION - GA-DOPED GE [J].

KIM, KM ;

WITT, AF ;

LICHTENSTEIGER, M ;

GATOS, HC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) :475-480

[9] PREPARATION PHASE-BOUNDARY ENERGIES, AND THERMOELECTRIC PROPERTIES OF INSB-SB EUTECTIC ALLOYS WITH ORDERED MICROSTRUCTURES [J].

LIEBMANN, WK ;

MILLER, EA .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (09) :2653-&

[10] QUANTITATIVE-ANALYSIS OF MICROSEGREGATION IN SILICON GROWN BY CZOCHRALSKI METHOD [J].

MURGAI, A ;

GATOS, HC ;

WITT, AF .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (02) :224-229

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