INTERFERENCE ENHANCED RAMAN-SCATTERING STUDY OF THE INTERFACIAL REACTION OF PD ON A-SI-H

被引：68

作者：

NEMANICH, RJ ^{[1
]}

TSAI, CC ^{[1
]}

THOMPSON, MJ ^{[1
]}

SIGMON, TW ^{[1
]}

机构：

[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 19卷 / 03期

关键词：

D O I：

10.1116/1.571085

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：685 / 688

页数：4

共 15 条

[1] IMPLANTED NOBLE-GAS ATOMS AS DIFFUSION MARKERS IN SILICIDE FORMATION [J].

CHU, WK ;

LAU, SS ;

MAYER, JW ;

MULLER, H .

THIN SOLID FILMS, 1975, 25 (02) :393-402

[2] INTERFERENCE ENHANCED RAMAN-SCATTERING FROM VERY THIN ABSORBING FILMS [J].

CONNELL, GAN ;

NEMANICH, RJ ;

TSAI, CC .

APPLIED PHYSICS LETTERS, 1980, 36 (01) :31-33

[3] MICROSCOPIC COMPOUND FORMATION AT THE PD-SI(111) INTERFACE [J].

FREEOUF, JL ;

RUBLOFF, GW ;

HO, PS ;

KUAN, TS .

PHYSICAL REVIEW LETTERS, 1979, 43 (24) :1836-1839

[4] POROSITY AND OXIDATION OF AMORPHOUS SILICON FILMS PREPARED BY EVAPORATION, SPUTTERING AND PLASMA-DEPOSITION [J].

FRITZSCHE, H ;

TSAI, CC .

SOLAR ENERGY MATERIALS, 1979, 1 (5-6) :471-479

[5]

GROVE AS, 1967, PHYS TECHNOL S, P23

[6] CHEMICAL AND STRUCTURAL-PROPERTIES OF THE PD-SI INTERFACE DURING THE INITIAL-STAGES OF SILICIDE FORMATION [J].

HO, PS ;

TAN, TY ;

LEWIS, JE ;

RUBLOFF, GW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1120-1124

[7]

KNIGHT JC, 1976, P C STRUCTURE EXCITA, P296

[8]

KNIGHTS JC, 1980, CRC CRIT REV SOLID S, P211

[9]

MANSURIPUR M, UNPUBLISHED

[10] INTERFERENCE-ENHANCED RAMAN-SCATTERING OF VERY THIN TITANIUM AND TITANIUM-OXIDE FILMS [J].

NEMANICH, RJ ;

TSAI, CC ;

CONNELL, GAN .

PHYSICAL REVIEW LETTERS, 1980, 44 (04) :273-276

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