SUBMONOLAYER GROWTH WITH REPULSIVE IMPURITIES - ISLAND DENSITY SCALING WITH ANOMALOUS DIFFUSION

被引：42
作者：
LIU, SD
BONIG, L
DETCH, J
METIU, H
机构：
[1] UNIV CALIF SANTA BARBARA,DEPT CHEM,SANTA BARBARA,CA 93106
[2] UNIV CALIF SANTA BARBARA,CTR QUANTIZED ELECTR STRUCT,SANTA BARBARA,CA 93106
来源：
PHYSICAL REVIEW LETTERS | 1995年 / 74卷 / 22期
关键词：
D O I：
10.1103/PhysRevLett.74.4495
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We examine the island density during submonolayer growth on a surface with randomly distributed repulsive impurities. Rate-equation analysis suggests a scaling relation which is tested by simulations. This relation can be used in conjunction with experiments to determine the exponent characterizing "anomalous" diffusion. © 1995 The American Physical Society.
引用
收藏
页码：4495 / 4498
页数：4
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