SCHOTTKY CONTACTS ON CHEMICALLY ETCHED P-TYPE AND N-TYPE INDIUM-PHOSPHIDE

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HOKELEK, E
ROBINSON, GY
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O59 [应用物理学];
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页码:426 / 428
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  • [1] CHEMICAL BONDING AND STRUCTURE OF METAL-SEMICONDUCTOR INTERFACES
    ANDREWS, JM
    PHILLIPS, JC
    [J]. PHYSICAL REVIEW LETTERS, 1975, 35 (01) : 56 - 59
  • [2] Barin I., 1973, THERMOCHEMICAL PROPE
  • [3] Barin I., 2013, THERMOCHEMICAL PROPE
  • [4] CHEMICAL BASIS FOR INP-METAL SCHOTTKY-BARRIER FORMATION
    BRILLSON, LJ
    BRUCKER, CF
    KATNANI, AD
    STOFFEL, NG
    MARGARITONDO, G
    [J]. APPLIED PHYSICS LETTERS, 1981, 38 (10) : 784 - 786
  • [5] ATOMIC AND ELECTRONIC-STRUCTURE OF INP-METAL INTERFACES - A PROTOTYPICAL III-V COMPOUND SEMICONDUCTOR
    BRILLSON, LJ
    BRUCKER, CF
    KATNANI, AD
    STOFFEL, NG
    MARGARITONDO, G
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 661 - 666
  • [6] BRILLSON LJ, 1979, J VAC SCI TECHNOL, V16, P1137, DOI 10.1116/1.570177
  • [7] TRANSITION IN SCHOTTKY-BARRIER FORMATION WITH CHEMICAL REACTIVITY
    BRILLSON, LJ
    [J]. PHYSICAL REVIEW LETTERS, 1978, 40 (04) : 260 - 263
  • [8] PHOTOEMISSION STUDY OF AU SCHOTTKY-BARRIER FORMATION ON GASB, GAAS, AND INP USING SYNCHROTRON RADIATION
    CHYE, PW
    LINDAU, I
    PIANETTA, P
    GARNER, CM
    SU, CY
    SPICER, WE
    [J]. PHYSICAL REVIEW B, 1978, 18 (10): : 5545 - 5559
  • [9] ROOM-TEMPERATURE INTERFACIAL REACTION IN AU-SEMICONDUCTOR SYSTEMS
    HIRAKI, A
    SHUTO, K
    KIM, S
    KAMMURA, W
    IWAMI, M
    [J]. APPLIED PHYSICS LETTERS, 1977, 31 (09) : 611 - 612
  • [10] A COMPARISON OF PD SCHOTTKY CONTACTS ON INP, GAAS AND SI
    HOKELEK, E
    ROBINSON, GY
    [J]. SOLID-STATE ELECTRONICS, 1981, 24 (02) : 99 - 103