STRESS COMPENSATION IN GA1-XALXAS1-YPY LPE LAYERS ON GAAS SUBSTRATES

被引：50

作者：

ROZGONYI, GA ^{[1
]}

PANISH, MB ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1973年 / 23卷 / 10期

关键词：

D O I：

10.1063/1.1654738

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：533 / 535

页数：3

共 13 条

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[9] SYSTEM GA-AS-SN - INCORPORATION OF SN INTO GAAS [J].

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JOURNAL OF APPLIED PHYSICS, 1973, 44 (06) :2659-2666

[10] PHASE EQUILIBRIA IN SYSTEM AL-GA-AS-SN AND ELECTRICAL PROPERTIES OF SN-DOPED LIQUID-PHASE EPITAXIAL ALXGA1-XAS [J].

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