PHYSICAL AND MATERIALS LIMITATIONS ON BURNOUT VOLTAGE OF GAAS POWER MESFETS

被引：20

作者：

TIWARI, S ^{[1
]}

EASTMAN, LF ^{[1
]}

RATHBUN, L ^{[1
]}

机构：

[1] CORNELL UNIV,NATL RES & RESOURCE FACIL SUBMICRON STRUCT,ITHACA,NY 14853

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 06期

关键词：

D O I：

10.1109/T-ED.1980.19985

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1045 / 1054

页数：10

共 19 条

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