PHOTOLUMINESCENCE STUDY OF ALXGA1-XSB GROWN BY LIQUID-PHASE EPITAXY

被引：10

作者：

KITAMURA, N ^{[1
]}

HIGUCHI, K ^{[1
]}

UEKITA, H ^{[1
]}

ICHIMURA, M ^{[1
]}

USAMI, A ^{[1
]}

WADA, T ^{[1
]}

机构：

[1] NAGOYA INST TECHNOL,DEPT ELECT & COMP ENGN,SHOWA KU,NAGOYA,AICHI 466,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1990年 / 29卷 / 08期

关键词：

Acceptor level; AlxGa1_xSb; Growth condition dependence; Liquid-phase epitaxy; Photoluminescence; Residual;

D O I：

10.1143/JJAP.29.1403

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The dependences of PL of AlxGa1-xSb on growth temperature, AlSb composition, excitation laser power, and donor impurity doping were investigated. Two main emissions and one additional peak, except for the band edge emission, were observed. The experimental results were interpreted with the residual acceptor level of Ev+30 meV and one defect level which was located at the energy of 70–120 meV, depending on AlSb composition, below the Γ conduction band edge. The PL spectra in undoped layers suggested that the emission at Eg–(70 to 120) meV (emission C) was different from one related to the double charged states of residual acceptors. In donor-doped layers, however, the emission which implied the possibility of the residual acceptor being doubly ionizable was observed close to emission C. © 1990 The Japan Society of Applied Physics.

引用

页码：1403 / 1407

页数：5

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