IONIZED BEAM DOPING IN MOLECULAR-BEAM EPITAXY OF GAAS AND ALXGA1-XAS

被引：20
|
作者：
MATSUNAGA, N
SUZUKI, T
TAKAHASHI, K
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1978年 / 49卷 / 12期
关键词：
D O I：
10.1063/1.324588
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：5710 / 5713
页数：4
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