IONIZED BEAM DOPING IN MOLECULAR-BEAM EPITAXY OF GAAS AND ALXGA1-XAS

被引：20

作者：

MATSUNAGA, N

SUZUKI, T

TAKAHASHI, K

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1978年 / 49卷 / 12期

关键词：

D O I：

10.1063/1.324588

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5710 / 5713

页数：4

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[7] BERYLLIUM DOPING AND DIFFUSION IN MOLECULAR-BEAM EPITAXY OF GAAS AND ALXGA1-XAS [J].

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[10] MOLECULAR-BEAM EPITAXY WITH IONIZED BEAM DOPING [J].

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JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 :443-449

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