NITROGEN-DOPED P-TYPE ZNSE FILMS GROWN BY MOVPE

被引:32
作者
OHKI, A
SHIBATA, N
ANDO, K
KATSUI, A
机构
关键词
D O I
10.1016/0022-0248(88)90605-7
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
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页码:692 / 696
页数:5
相关论文
共 12 条
[1]   COMPARISON OF MOCVD-GROWN WITH CONVENTIONAL II-VI MATERIALS PARAMETERS FOR EL THIN-FILMS [J].
DEAN, PJ .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1984, 81 (02) :625-646
[2]  
KAWAKYU Y, 1987, 19TH C SOL STAT DEV, P259
[3]   P-TYPE CONDUCTION IN ZNSE GROWN BY TEMPERATURE DIFFERENCE METHOD UNDER CONTROLLED VAPOR-PRESSURE [J].
NISHIZAWA, J ;
SUZUKI, R ;
OKUNO, Y .
JOURNAL OF APPLIED PHYSICS, 1986, 59 (06) :2256-2258
[4]   MOLECULAR-BEAM EPITAXIAL-GROWTH OF NITROGEN-DOPED ZNSE WITH ION DOPING TECHNIQUE [J].
OHKAWA, K ;
MITSUYU, T ;
YAMAZAKI, O .
JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) :329-334
[5]  
OKAJIMA M, 1986, 18TH C SOL STAT DEV, P647
[6]   PHOTOLUMINESCENCE PROPERTIES OF NITROGEN-DOPED ZNSE GROWN BY MOLECULAR-BEAM EPITAXY [J].
PARK, RM ;
MAR, HA ;
SALANSKY, NM .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (02) :1047-1049
[7]   HIGH-QUALITY ZNSE FILM GROWTH BY 0.1-ATM MOVPE UNDER THE DIETHYLZINC DIFFUSION-LIMITED CONDITION [J].
SHIBATA, N ;
OHKI, A ;
ZEMBUTSU, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1987, 26 (08) :1305-1309
[8]   PHOTOLUMINESCENCE DUE TO LATTICE-MISMATCH DEFECTS IN HIGH-PURITY ZNSE LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY [J].
SHIBATA, N ;
OHKI, A ;
ZEMBUTSU, S ;
KATSUI, A .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (03) :L441-L443
[10]   CHARACTERIZATION OF ZNSE GROWN BY MOLECULAR-BEAM EPITAXY [J].
YAO, T .
JOURNAL OF CRYSTAL GROWTH, 1985, 72 (1-2) :31-40