A-SI-H GAP STATES INVESTIGATED BY CPM AND SCLC

被引：58

作者：

KOCKA, J ^{[1
]}

VANECEK, M ^{[1
]}

SCHAUER, F ^{[1
]}

机构：

[1] TECH ACAD BRNO, CS-61200 BRNO, CZECHOSLOVAKIA

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1987年 / 97-8卷

关键词：

D O I：

10.1016/0022-3093(87)90169-4

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：715 / 722

页数：8

共 26 条

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LEY, L .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 :87-90

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AMER, NM .

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[6] THE DENSITY OF STATES IN UNDOPED AND DOPED AMORPHOUS HYDROGENATED SILICON [J].

KOCKA, J .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 90 (1-3) :91-98

[7]

KOCKA J, 1986, 18TH P ICPS STOCKH, P1081

[8] MEASUREMENT OF THE DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON BY SPACE-CHARGE SPECTROSCOPY [J].

LANG, DV ;

COHEN, JD ;

HARBISON, JP .

PHYSICAL REVIEW B, 1982, 25 (08) :5285-5320

[9]

MIRAMONTES R, 1986, 18TH P ICPS STOCKH, P1077

[10] ENERGY-LEVEL AND PHOTOIONIZATION CROSS-SECTION OF GAP STATES IN A-SI-H [J].

OKUSHI, H ;

TANAKA, K .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 :75-78

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