3-LEVEL TRANSFERRED-ELECTRON EFFECTS IN INP

被引：28

作者：

REES, HD

HILSUM, C

机构：

来源：

ELECTRONICS LETTERS | 1971年 / 7卷 / 15期

关键词：

D O I：

10.1049/el:19710294

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：437 / &

共 9 条

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BOERS, PM .

PHYSICS LETTERS A, 1971, A 34 (06) :329-+

[2] CYCLOTRON RESONANCE WITH EPITAXIAL FILMS OF TYPE INP [J].

CHAMBERL.JM ;

SIMMONDS, PE ;

STRADLIN.RA ;

BRADLEY, CC .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1971, 4 (02) :L38-&

[3] MONTE-CARLO DETERMINATION OF ELECTRON TRANSPORT PROPERTIES IN GALLIUM ARSENIDE [J].

FAWCETT, W ;

BOARDMAN, AD ;

SWAIN, S .

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[4]

HAKKI BW, 1970, 10 P INT C PHYS SEM, P566

[5] 3-LEVEL OSCILLATOR - A NEW FORM OF TRANSFERRED-ELECTRON DEVICE [J].

HILSUM, C ;

REES, HD .

ELECTRONICS LETTERS, 1970, 6 (09) :277-&

[6] BAND STRUCTURE OF INDIUM ANTIMONIDE [J].

KANE, EO .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 1 (04) :249-261

[7]

LORENZ MR, 1970, 10 P INT C PHYS SEM, P444

[8] CALCULATION OF DISTRIBUTION FUNCTIONS BY EXPLOITING STABILITY OF STEADY STATE [J].

REES, HD .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1969, 30 (03) :643-&

[9]

TAYLOR BN, TO BE PUBLISHED

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