NEGATIVE-U PROPERTIES FOR POINT-DEFECTS IN SILICON

被引：297

作者：

WATKINS, GD ^{[1
]}

TROXELL, JR ^{[1
]}

机构：

[1] LEHIGH UNIV,SHERMAN FAIRCHILD LAB,BETHLEHEM,PA 18015

来源：

PHYSICAL REVIEW LETTERS | 1980年 / 44卷 / 09期

关键词：

D O I：

10.1103/PhysRevLett.44.593

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：593 / 596

页数：4

共 15 条

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[5]

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[6] VALENCE-ALTERNATION MODEL FOR LOCALIZED GAP STATES IN LONE-PAIR SEMICONDUCTORS [J].

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PHYSICAL REVIEW LETTERS, 1976, 37 (22) :1504-1507

[7]

KIMERLING LC, 1976, RAD EFFECTS SEMICOND, P221

[8]

MUKASHEV BN, UNPUBLISHED

[9]

TROXELL JR, UNPUBLISHED

[10]

TROXELL JR, 1979, THESIS LEHIGH U

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