THERMAL GENERATION OF CARRIERS IN GOLD-DOPED SILICON

被引：10

作者：

RICHOU, F

PELOUS, G

LECROSNIER, D

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 12期

关键词：

D O I：

10.1063/1.327611

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：6252 / 6257

页数：6

相关论文

共 30 条

[1] ELECTRICAL PROPERTIES OF GOLD-DOPED DIFFUSED SILICON COMPUTER DIODES
BAKANOWSKI, AE
FORSTER, JH
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (01): : 87 - 104
[2] THERMAL CAPTURE CROSS-SECTION OF FREE-ELECTRONS AT NEUTRAL GOLD CENTERS IN N-TYPE SILICON
BARBOLLA, J
PUGNET, M
BRABANT, JC
BROUSSEAU, M
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 36 (02): : 495 - 498
[3] TEMPERATURE-DEPENDENCE OF TRANSIENT CAPACITANCE OF AL-SIO2-SI CAPACITORS
BHARAT, R
FITZGIBBONS, ET
LAPRADE, JE
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (02) : 170 - 172
[4] TEMPERATURE-DEPENDENCE OF BAND-GAP OF SILICON
BLUDAU, W
ONTON, A
HEINKE, W
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) : 1846 - 1848
[5] NOISE IN BURIED CHANNEL CHARGE-COUPLED-DEVICES
BRODERSEN, RW
EMMONS, SP
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1976, 11 (01) : 147 - 155
[6] ELECTRON-CAPTURE CROSS-SECTION AND ENERGY-LEVEL OF GOLD ACCEPTOR CENTER IN SILICON
BROTHERTON, SD
BICKNELL, J
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (02) : 667 - 671
[7] DETERMINATION OF SURFACE-GENERATION AND BULK-GENERATION CURRENTS IN LOW-LEAKAGE SILICON MOS STRUCTURES
BROTHERTON, SD
GILL, A
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (10) : 890 - 892
[8] LEAKAGE STUDIES IN HIGH-DENSITY DYNAMIC MOS MEMORY DEVICES
CHATTERJEE, PK
TAYLOR, GW
TASCH, AF
FU, HS
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) : 486 - 498
[9] INFLUENCE OF RECOMBINATION CENTER DATA ON IV CHARACTERISTICS OF SILICON P+-I-N+ DIODES
DUDECK, I
KASSING, R
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (11) : 4786 - 4790
[10] GOLD AS AN OPTIMAL RECOMBINATION CENTER FOR POWER RECTIFIERS AND THYRISTORS
DUDECK, I
KASSING, R
[J]. SOLID-STATE ELECTRONICS, 1977, 20 (12) : 1033 - 1036