CONDUCTION STUDIES IN SILICON-NITRIDE - DARK CURRENTS AND PHOTOCURRENTS

被引：46

作者：

DIMARIA, DJ ^{[1
]}

ARNETT, PC ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 1977年 / 21卷 / 03期

关键词：

D O I：

10.1147/rd.213.0227

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：227 / 244

页数：18

共 46 条

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ARNETT, PC ;

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[2] SILICON-NITRIDE TRAP PROPERTIES AS REVEALED BY CHARGE-CENTROID MEASUREMENTS ON MNOS DEVICES [J].

ARNETT, PC ;

YUN, BH .

APPLIED PHYSICS LETTERS, 1975, 26 (03) :94-96

[3] TRANSIENT CONDUCTION IN INSULATORS AT HIGH FIELDS [J].

ARNETT, PC .

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[4] CONTACT CURRENTS IN SILICON-NITRIDE [J].

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DIMARIA, DJ .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (05) :2092-2097

[5] OPTICAL PROPERTIES OF COPPER AND GOLD IN VACUUM ULTRA-VIOLET [J].

BEAGLEHO.D .

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[6] PHOTOINJECTION INTO SIO2 - ELECTRON SCATTERING IN IMAGE FORCE POTENTIAL WELL [J].

BERGLUND, CN ;

POWELL, RJ .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (02) :573-+

[7]

Berning PH, 1963, PHYS THIN FILMS, V1, P69

[8]

BORN M, 1964, PRINCIPLES OPTICS, pCH1

[9] ELECTRICAL CHARACTERISTICS OF SILICON NITRIDE FILMS PREPARED BY SILANE-AMMONIA REACTION [J].

BROWN, GA ;

ROBINETT.WC ;

CARLSON, HG .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (09) :948-&

[10]

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