MODIFICATION OF THEORY OF THRESHOLD VOLTAGE SHIFT OF MOS-TRANSISTORS BY ION-IMPLANTATION

被引：7

作者：

RUNGE, H ^{[1
]}

机构：

[1] SIEMENS AG,FORSCH LAB,MUNICH,FED REP GER

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1975年 / 30卷 / 01期

关键词：

D O I：

10.1002/pssa.2210300115

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：147 / 153

页数：7

共 50 条

[1] THRESHOLD VOLTAGE SHIFT OF MOS-TRANSISTORS BY ION-IMPLANTATION
RUNGE, H
ELECTRONIC ENGINEERING, 1976, 48 (575): : 41 - 43
[2] THRESHOLD VOLTAGE SHIFT OF P-CHANNEL MOS-TRANSISTORS BY IMPLANTATION OF DONORS
RUNGE, H
APPLIED PHYSICS, 1975, 8 (01): : 43 - 46
[3] THRESHOLD VOLTAGE SHIFT OF MOS TRANSISTORS BY ION IMPLANTATION.
Runge, H.
Electronic Engineering (London), 1976, 48 (575): : 41 - 43
[4] ON THE SHIFT OF THRESHOLD VOLTAGE OF NONUNIFORMLY DOPED MOS-TRANSISTORS
WENG, TH
SOLID-STATE ELECTRONICS, 1980, 23 (03) : 283 - 284
[5] INFLUENCE OF PARAMETERS OF ION-IMPLANTATION PROCESS ON SHIFT OF THRESHOLD VOLTAGE OF MOS-TRANSISTOR
DUSZAK, M
JAKUBOWSKI, A
BULLETIN DE L ACADEMIE POLONAISE DES SCIENCES-SERIE DES SCIENCES TECHNIQUES, 1978, 26 (10): : 905 - 911
[6] THRESHOLD-VOLTAGE TEMPERATURE DRIFT IN ION-IMPLANTED MOS-TRANSISTORS
SONG, BS
GRAY, PR
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 661 - 668
[7] SIMPLE THEORY FOR THRESHOLD VOLTAGE MODULATION IN SHORT-CHANNEL MOS-TRANSISTORS
VARSHNEY, RC
ELECTRONICS LETTERS, 1973, 9 (25) : 600 - 602
[8] MOS THRESHOLD SHIFTING BY ION-IMPLANTATION
SIGMON, TW
SWANSON, R
SOLID-STATE ELECTRONICS, 1973, 16 (11) : 1217 - 1232
[9] THRESHOLD VOLTAGE MISMATCH IN SHORT-CHANNEL MOS-TRANSISTORS
STEYAERT, M
BASTOS, J
ROOVERS, R
KINGET, P
SANSEN, W
GRAINDOURZE, B
PERGOOT, A
JANSSENS, E
ELECTRONICS LETTERS, 1994, 30 (18) : 1546 - 1548
[10] THRESHOLD-VOLTAGE SENSITIVITY OF ION-IMPLANTED MOS-TRANSISTORS DUE TO PROCESS VARIATIONS
SCHEMMERT, W
ZIMMER, G
ELECTRONICS LETTERS, 1974, 10 (09) : 151 - 152

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