HIGHLY SELECTIVE REACTIVE ION ETCHING OF POLYSILICON WITH HYDROGEN BROMIDE

被引：27

作者：

TSOU, LY

机构：

来源：

关键词：

D O I：

10.1149/1.2096391

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：3003 / 3006

页数：4

共 8 条

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[7] ION BEAM-ASSISTED ETCHING OF ALUMINUM WITH CHLORINE [J].

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[8]

WEBB C, 1986, ISSCC, P262