CHARACTERIZATION OF GAAS/ALAS INTERFACIAL ATOMIC STEP STRUCTURES ON A (411)A-ORIENTED SUBSTRATE BY TRANSMISSION ELECTRON-MICROSCOPE

被引：12

作者：

TSUDA, Y ^{[1
]}

SHIMOMURA, S ^{[1
]}

HIYAMIZU, S ^{[1
]}

SANO, N ^{[1
]}

机构：

[1] OSAKA UNIV, FAC ENGN SCI, TOYONAKA, OSAKA 560, JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 150卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)00783-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We observed atomic structures of (411)A GaAs/AlAs hetero-interfaces using a transmission electron microscope, and studied the numerical computer simulations of the lattice images for the first time. The observed specimens were GaAs/AlAs multi-layer structures fabricated by molecular beam epitaxy, where the AlAs layers were very thin (0.75-2.1 monolayer). From the hetero-interfacial structures observed in cross-sectional view, it was found that the (411)A atomic step structures were based on Shimomura's model, which has already been proposed in a previous paper. We will discuss the concrete interfacial structure.

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页码：415 / 420

页数：6

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