0.13 MU-M PATTERN DELINEATION USING KRF EXCIMER-LASER LIGHT

被引：6
作者：
IMAI, A
ASAI, N
UENO, T
HASEGAWA, N
TANAKA, T
TERASAWA, T
OKAZAKI, S
机构：
[1] Central Research Laboratory, Hitachi Ltd., Kokubunji city, Tokyo, 185
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 12B期
关键词：
OPTICAL LITHOGRAPHY; KRF; GIGABIT; RESOLUTION; DOF; RESIST;
D O I：
10.1143/JJAP.33.6816
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
This paper investigates the resolution limit of KrF excimer laser lithography using phase-shifting mask (PSM) technology by simulation and experiment. An improved phase-shifting mask structure combined with a newly developed crosslinking type negative-tone resist on a reflection-suppressed trilayer resist makes it possible to delineate minimum pattern size of 0.13 mu m with sufficient depth of focus, using a high-NA lens system under high coherent light. These results show that KrF excimer laser lithography applying PSM technology is a good candidate for gigabit-level ULSI fabrication by lithography.
引用
收藏
页码：6816 / 6822
页数：7
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