SOLID-PHASE EPITAXIAL CRYSTALLIZATION OF STRAIN-RELAXED SI1-XGEX ALLOY LAYERS

被引：55

作者：

KRINGHOJ, P

ELLIMAN, RG

机构：

[1] Electronic Materials Engineering Department, Research School of Physical Sciences and Engineering, Australian National University, Canberra

来源：

PHYSICAL REVIEW LETTERS | 1994年 / 73卷 / 06期

关键词：

D O I：

10.1103/PhysRevLett.73.858

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Solid-phase epitaxial crystallization (SPEC) of Si, Ge, and strain-relaxed Si1-xGex alloys, with x in the range 0.11 to 0.53, is investigated in the temperature range 300 to 650-degrees-C. The activation energy for SPEC is shown not to vary monotonically with increasing Ge concentration but to increase above that of Si for Ge concentrations less than x less-than-or-equal-to 0.4. This unexpected behavior is discussed in terms of existing models for SPEC.

引用

页码：858 / 861

页数：4

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