IMAGE FORCES AND BEHAVIOR OF MOBILE POSITIVE-IONS IN SILICON DIOXIDE

被引：50
作者：
WILLIAMS, R [1 ]
WOODS, MH [1 ]
机构：
[1] RCA LABS, PRINCETON, NJ 08540 USA
来源：
APPLIED PHYSICS LETTERS | 1973年 / 22卷 / 09期
关键词：
D O I：
10.1063/1.1654711
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：458 / 459
页数：2
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