LOW LEAKAGE, HIGH-PERFORMANCE GAAS-BASED HIGH-TEMPERATURE ELECTRONICS

被引:0
|
作者
SADWICK, LP [1 ]
CROFTS, RJ [1 ]
FENG, YH [1 ]
SOKOLICH, M [1 ]
HWU, RJ [1 ]
机构
[1] HUGHES AIRCRAFT CO,GAAS OPERAT,TORRANCE,CA 90509
来源
COMPOUND SEMICONDUCTORS 1994 | 1995年 / 141期
关键词
D O I
暂无
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
This paper reports on substantial improvements in device performance and reduction of the parasitic and leakage currents in gallium arsenide (GaAs) metal semiconductor field effect transistor (MESFET) devices and circuits at temperatures up to 350 degrees C. These improvements in device performance, which have been verified on over 300 transistors measured on twenty different wafers, are obtained by a judicious choice of substrate material, contact technology, device layout, and device biasing. In addition, these MESFETs also displayed an enhanced resistance to breakdown at elevated temperatures. The methods used to realize these improvements have general applicability and work equally well with both enhancement and depletion n-channel MESFET's.
引用
收藏
页码:383 / 388
页数:6
相关论文
共 50 条
  • [31] SIC FOR SENSORS AND HIGH-TEMPERATURE ELECTRONICS
    MULLER, G
    KROTZ, G
    SENSORS AND ACTUATORS A-PHYSICAL, 1994, 43 (1-3) : 259 - 268
  • [32] Materials for high-temperature digital electronics
    Pradhan, Dhiren K.
    Moore, David C.
    Francis, A. Matt
    Kupernik, Jacob
    Kennedy, W. Joshua
    Glavin, Nicholas R.
    Olsson III, Roy H.
    Jariwala, Deep
    NATURE REVIEWS MATERIALS, 2024, 9 (11): : 790 - 807
  • [33] Rise of flexible high-temperature electronics
    Yun-Lei Zhou
    Wen-Na Cheng
    Yun-Zhao Bai
    Chao Hou
    Kan Li
    Yong-An Huang
    Rare Metals, 2023, 42 : 1773 - 1777
  • [34] GaAs-based high power diode laser
    Gu, Yuanyuan
    Wu, Guoxing
    HuiLu
    Cui, Yan
    MATERIALS PROCESSING TECHNOLOGY II, PTS 1-4, 2012, 538-541 : 1852 - 1856
  • [35] Toward High-performance Electronics Based on Carbon Nanomaterials
    Han, Shu-Jen
    2016 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2016, : 161 - 164
  • [36] Secondary High-Temperature Treatment of Porous Carbons for High-Performance Supercapacitors
    Chi, Weihao
    Wang, Guanwen
    Qiu, Zhipeng
    Li, Qiqi
    Xu, Zheng
    Li, Zhiyuan
    Qi, Bin
    Cao, Ke
    Chi, Chunlei
    Wei, Tong
    Fan, Zhuangjun
    Shaw, Leon L.
    BATTERIES-BASEL, 2024, 10 (01):
  • [37] Rise of flexible high-temperature electronics
    Yun-Lei Zhou
    Wen-Na Cheng
    Yun-Zhao Bai
    Chao Hou
    Kan Li
    Yong-An Huang
    RareMetals, 2023, 42 (06) : 1773 - 1777
  • [39] Effects of various fibres on high-temperature spalling in high-performance concrete
    Ozawa, Mitsuo
    Morimoto, Hiroaki
    CONSTRUCTION AND BUILDING MATERIALS, 2014, 71 : 83 - 92
  • [40] MODIFICATION OF HIGH-TEMPERATURE AND HIGH-PERFORMANCE POLYMERS BY ION-IMPLANTATION
    WANG, YQ
    MOHITE, SS
    BRIDWELL, LB
    GIEDD, RE
    SOFIELD, CJ
    JOURNAL OF MATERIALS RESEARCH, 1993, 8 (02) : 388 - 402