ELECTRON-STATES IN HEAVILY DOPED SEMICONDUCTORS

[1] DIELECTRIC ANOMALY AND METAL-INSULATOR TRANSITION IN N-TYPE SILICON [J]. PHYSICAL REVIEW LETTERS, 1975, 34 (26) : 1627 - 1630

[2] CHAKRAVARTY S, 1979, 7TH P INT C HIGH PRE

[3] FRITZSCHE H, 1978, METAL NONMETAL TRANS

[4] Keyes R. W., 1977, Comments on Solid State Physics, V7, P149

[5] MAGNETIC-FIELD DEPENDENCE OF THE SPECIFIC-HEAT OF HEAVILY PHOSPHORUS DOPED SILICON [J]. SOLID STATE COMMUNICATIONS, 1979, 32 (11) : 1147 - 1150

[6] LEROUXHUGON P, 1976, J PHYS S10, V37, P323

[7] Mott N. F., 1974, METAL INSULATOR TRAN

[8] ABSOLUTE SPIN SUSCEPTIBILITIES AND OTHER ESR PARAMETERS OF HEAVILY DOPED N-TYPE SILICON .2. UNIFIED TREATMENT [J]. PHYSICAL REVIEW B, 1973, 7 (08) : 3842 - 3858

[9] CONDENSED PHASE OF LITHIUM IMPURITIES IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1976, 37 (06) : 354 - 357

[10] SCATTERING MECHANISMS IN HEAVILY DOPED SEMICONDUCTORS .1. MAXIMA IN RESISTIVITY AND HALL-COEFFICIENT [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1980, 48 (05) : 1566 - 1575

[1] DIELECTRIC ANOMALY AND METAL-INSULATOR TRANSITION IN N-TYPE SILICON [J]. PHYSICAL REVIEW LETTERS, 1975, 34 (26) : 1627 - 1630

[2] CHAKRAVARTY S, 1979, 7TH P INT C HIGH PRE

[3] FRITZSCHE H, 1978, METAL NONMETAL TRANS

[4] Keyes R. W., 1977, Comments on Solid State Physics, V7, P149

[5] MAGNETIC-FIELD DEPENDENCE OF THE SPECIFIC-HEAT OF HEAVILY PHOSPHORUS DOPED SILICON [J]. SOLID STATE COMMUNICATIONS, 1979, 32 (11) : 1147 - 1150

[6] LEROUXHUGON P, 1976, J PHYS S10, V37, P323

[7] Mott N. F., 1974, METAL INSULATOR TRAN

[8] ABSOLUTE SPIN SUSCEPTIBILITIES AND OTHER ESR PARAMETERS OF HEAVILY DOPED N-TYPE SILICON .2. UNIFIED TREATMENT [J]. PHYSICAL REVIEW B, 1973, 7 (08) : 3842 - 3858

[9] CONDENSED PHASE OF LITHIUM IMPURITIES IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1976, 37 (06) : 354 - 357

[10] SCATTERING MECHANISMS IN HEAVILY DOPED SEMICONDUCTORS .1. MAXIMA IN RESISTIVITY AND HALL-COEFFICIENT [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1980, 48 (05) : 1566 - 1575