ELECTRON-IRRADIATION-INDUCED DEFECTS IN SI-GE ALLOYS

被引：27

作者：

GOUBET, JJ ^{[1
]}

STIEVENARD, D ^{[1
]}

MATHIOT, D ^{[1
]}

ZAZOUI, M ^{[1
]}

机构：

[1] CTR NATL ETUD TELECOMMUN MEYLAN,F-38243 MEYLAN,FRANCE

来源：

PHYSICAL REVIEW B | 1992年 / 46卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.46.10113

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have studied the defects introduced by electron irradiation in n-doped Si-Ge alloys. Capacitance techniques were used to characterize the defects. Four deep levels are detected, labeled S1 to S4. Only the two main defects, S3 and S4, have been studied, the other ones having low concentration. Their associated energy levels lie at E(c) -0.32 and E(c) -0.49 eV with capture cross sections equal to 6 X 10(-16) and 2 X 10(-15) cm2, respectively. These two defects have a donor character. The study of their introduction rate versus the fluence indicates that they are not primary intrinsic defects but complexes. The variation of the S4 concentration versus the energy of irradiation shows that the threshold energy is 31+/-2 eV. Finally, a comparison with clectron-irradiation-induced defects in silicon and germanium is made.

引用

页码：10113 / 10118

页数：6

共 38 条

[11] THEORETICAL AND EXPERIMENTAL ASPECTS OF THE THERMAL-DEPENDENCE OF ELECTRON-CAPTURE COEFFICIENTS [J].