AN AVALANCHE MULTIPLICATION MODEL FOR BIPOLAR-TRANSISTORS

被引：19

作者：

LIOU, JJ ^{[1
]}

YUAN, JS ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS INC, HOUSTON, TX 77001 USA

来源：

SOLID-STATE ELECTRONICS | 1990年 / 33卷 / 01期

关键词：

D O I：

10.1016/0038-1101(90)90006-Z

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A physics-based model that describes the multiplication factor and the generation current of bipolar transistors is presented. No extra fitting or model parameters are needed in the model. Comparison on the present model, the model employed in SPICE, and measurement data are included. © 1990.

引用

页码：35 / 38

页数：4

共 18 条

[1]

[Anonymous], 2016, NUMERICAL ANAL

[2]

Antognetti P, 1988, SEMICONDUCTOR DEVICE

[3] HIGH-CURRENT REGIMES IN TRANSISTOR COLLECTOR REGIONS [J].