THRESHOLD VOLTAGE AND GAIN TERM BETA OF ION-IMPLANTED ENHANCEMENT-MODE N-CHANNEL MOS-TRANSISTORS

被引：14

作者：

KAMOSHID.M ^{[1
]}

机构：

[1] NIPPON ELECT CO LTD,KAWASAKI,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1973年 / 22卷 / 08期

关键词：

D O I：

10.1063/1.1654691

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：404 / 405

页数：2

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