THRESHOLD VOLTAGE AND GAIN TERM BETA OF ION-IMPLANTED ENHANCEMENT-MODE N-CHANNEL MOS-TRANSISTORS

被引：14

作者：

KAMOSHID.M ^{[1
]}

机构：

[1] NIPPON ELECT CO LTD,KAWASAKI,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1973年 / 22卷 / 08期

关键词：

D O I：

10.1063/1.1654691

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：404 / 405

页数：2

共 50 条

[1] THRESHOLD-VOLTAGE TEMPERATURE DRIFT IN ION-IMPLANTED MOS-TRANSISTORS
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[2] THRESHOLD-VOLTAGE SENSITIVITY OF ION-IMPLANTED MOS-TRANSISTORS DUE TO PROCESS VARIATIONS
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[3] CONDUCTANCE OF ION-IMPLANTED BURIED-CHANNEL MOS-TRANSISTORS
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[4] CHARGE TRANSPORT IN ION-IMPLANTED BURIED CHANNEL MOS-TRANSISTORS
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[5] MAGNETOSENSITIVITY OF N-CHANNEL MOS-TRANSISTORS
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[7] ION-IMPLANTED COMPLEMENTARY MOS-TRANSISTORS IN LOW-VOLTAGE CIRCUITS
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[8] ELECTRICAL CHARACTERISTICS OF ION-IMPLANTED P-CHANNEL MOS-TRANSISTORS
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[9] ELECTRICAL CHARACTERISTICS OF ION-IMPLANTED P-CHANNEL MOS-TRANSISTORS
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[10] ELECTRICAL CHARACTERISTICS OF BORON-IMPLANTED N-CHANNEL MOS-TRANSISTORS
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