PREPARATION OF EPITAXIAL GAXIN1-XAS

被引：52

作者：

CONRAD, RW

HOYT, PL

MARTIN, DD

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1967年 / 114卷 / 2P1期

关键词：

D O I：

10.1149/1.2426530

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：164 / &

共 12 条

[1] THERMAL, ELECTRICAL AND OPTICAL PROPERTIES OF (IN,GA)AS ALLOYS [J].

ABRAHAMS, MS ;

BRAUNSTEIN, R ;

ROSI, FD .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 10 (2-3) :204-210

[2] THERMAL EXPANSION AND RELATED BONDING PROBLEMS OF SOME III-V COMPOUND SEMICONDUCTORS [J].

BERNSTEIN, L ;

BEALS, RJ .

JOURNAL OF APPLIED PHYSICS, 1961, 32 (01) :122-&

[3]

BROOKS H, UNPUBLISHED WORK

[4] REFLECTIVITY STUDIES OF EPITAXIAL GAXIN1-X AS [J].

CONRAD, RW ;

JONES, CE ;

WILLIAMS, EW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (03) :287-&

[5] EPITAXIAL INAS ON SEMI-INSULATING GAAS SUBSTRATES [J].

CRONIN, GR ;

CONRAD, RW ;

BORELLO, SR .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (12) :1336-&

[6] EPITAXIAL GROWTH OF GALLIUM ARSENIDE ON GERMANIUM SUBSTRATES .1. THE RELATIONSHIP BETWEEN FAULT FORMATION IN GALLIUM ARSENIDE FILMS AND THE SURFACE OF THEIR GERMANIUM SUBSTRATE [J].

GABOR, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (07) :817-820

[7] THERMAL AND ELECTRICAL TRANSPORT IN INAS-GAAS ALLOYS [J].

HOCKINGS, EF ;

KUDMAN, I ;

SEIDEL, TE ;

SCHMELZ, CM ;

STEIGMEIER, EF .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (07) :2879-+

[8] PREPARATION OF EPITAXIAL SEMI-INSULATING GALLIUM ARSENIDE BY IRON DOPING [J].

HOYT, PL ;

HAISTY, RW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (03) :296-&

[9] PREPARATION AND PROPERTIES OF GAAS-INAS MIXED CRYSTALS [J].

MINDEN, HT .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (03) :300-&

[10]

REISMAN A, 1966, J ELECTROCHEM SOC, V113, P296

← 1 2 →