FABRICATION OF HIGH-PERFORMANCE APCVD A-SI TFT USING ION DOPING

被引：0
作者：
AHN, BC
KIM, JH
KIM, DG
MOON, BY
LEE, KH
YOO, SS
HAN, MK
JANG, J
机构：
[1] KYUNG HEE UNIV,DEPT PHYS,DONGDAEMOON KU,SEOUL 130701,SOUTH KOREA
[2] SEOUL NATL UNIV,DEPT ELECT ENGN,KWANAK KU,SEOUL,SOUTH KOREA
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1993年 / 166卷
关键词：
D O I：
暂无
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We have studied P ion doping of atmospheric pressure (AP) CVD a-Si. The effect of the temperature of ion doping on the electrical conductivity was investigated. The conductivity increases with doping temperature up to 350 degrees C and then decreases, giving a maximum value of 6x10(-2)S/cm at 350 degrees C when the acceleration voltage and doping time were 6kV and 90s, respectively. The ion-doped a-Si layer was used to fabricate inverse staggered type APCVD a-Si thin film transistors (TFTs). We obtained a field effect mobility of 1.0 cm(2)/Vs and a threshold voltage of 6.3V.
引用
收藏
页码：759 / 762
页数：4
相关论文
共 6 条
  • [1] HOT-WALL CHEMICAL-VAPOR-DEPOSITION OF AMORPHOUS-SILICON AND ITS APPLICATION TO THIN-FILM TRANSISTORS
    AHN, BC
    SHIMIZU, K
    SATOH, T
    KANOH, H
    SUGIURA, O
    MATSUMURA, M
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (12B): : 3695 - 3699
  • [2] AHN BC, 1993, IN PRESS MAT RES SOC
  • [3] EFFECT OF ION DOPING CONDITIONS ON ELECTRICAL-CONDUCTIVITY OF AMORPHOUS-SILICON FILMS AND ITS APPLICATION TO THIN-FILM TRANSISTORS
    KAKKAD, R
    SHIMANO, T
    IBARAKI, N
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (12B): : 4563 - 4566
  • [4] MATSUMURA M, 1993, IN PRESS MAT RES SOC
  • [5] FORMATION OF N+ A-SI-H THIN-LAYER BY ION-DOPING TECHNIQUE
    YOSHIDA, A
    KITAGAWA, M
    HIRAO, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (5A): : 2147 - 2151
  • [6] FABRICATION OF A-SI-H THIN-FILM TRANSISTORS ON 4-INCH GLASS SUBSTRATES BY A LARGE AREA ION DOPING TECHNIQUE
    YOSHIDA, A
    NUKAYAMA, M
    ANDOH, Y
    KITAGAWA, M
    HIRAO, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1991, 30 (1A): : L67 - L69
1