IDENTIFICATION AND PROPERTIES OF DEFECTS IN GAP

被引:45
作者
SCHEFFLER, M [1 ]
PANTELIDES, ST [1 ]
LIPARI, NO [1 ]
BERNHOLC, J [1 ]
机构
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
关键词
D O I
10.1103/PhysRevLett.47.413
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:413 / 416
页数:4
相关论文
共 17 条
[1]   SELF-CONSISTENT GREENS FUNCTION CALCULATION OF IDEAL SI VACANCY [J].
BARAFF, GA ;
SCHLUTER, M .
PHYSICAL REVIEW LETTERS, 1978, 41 (13) :892-895
[2]   NEW SELF-CONSISTENT APPROACH TO THE ELECTRONIC-STRUCTURE OF LOCALIZED DEFECTS IN SOLIDS [J].
BARAFF, GA ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1979, 19 (10) :4965-4979
[3]   SELF-CONSISTENT METHOD FOR POINT-DEFECTS IN SEMICONDUCTORS - APPLICATION TO VACANCY IN SILICON [J].
BERNHOLC, J ;
LIPARI, NO ;
PANTELIDES, ST .
PHYSICAL REVIEW LETTERS, 1978, 41 (13) :895-899
[4]   SCATTERING-THEORETIC METHOD FOR DEFECTS IN SEMICONDUCTORS .2. SELF-CONSISTENT FORMULATION AND APPLICATION TO THE VACANCY IN SILICON [J].
BERNHOLC, J ;
LIPARI, NO ;
PANTELIDES, ST .
PHYSICAL REVIEW B, 1980, 21 (08) :3545-3562
[5]   OPTICAL PROPERTIES OF GROUP 4 ELEMENTS CARBON AND SILICON IN GALLIUM PHOSPHIDE [J].
DEAN, PJ ;
FROSCH, CJ ;
HENRY, CH .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (12) :5631-&
[6]   SEMICONDUCTOR CHARGE-DENSITIES WITH HARD-CORE AND SOFT-CORE PSEUDOPOTENTIALS [J].
HAMANN, DR .
PHYSICAL REVIEW LETTERS, 1979, 42 (10) :662-665
[7]  
IHM J, 1978, PHYS REV B, V17, P706
[8]  
JAROS M, 1978, J PHYS C, V11, pL216
[9]   ESR DETECTION OF ANTISITE LATTICE-DEFECTS IN GAP, CDSIP2, AND ZNGEP2 [J].
KAUFMANN, U ;
SCHNEIDER, J ;
RAUBER, A .
APPLIED PHYSICS LETTERS, 1976, 29 (05) :312-313
[10]  
KAUFMANN U, UNPUBLISHED