FORMATION OF SILICIDE THIN-FILMS BY SOLID-STATE REACTION

被引：57
作者：
GAS, P [1 ]
DHEURLE, FM [1 ]
机构：
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源：
APPLIED SURFACE SCIENCE | 1993年 / 73卷
关键词：
D O I：
10.1016/0169-4332(93)90160-D
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Because of the practical interest of silicides, the M-Si thin film reaction has been thoroughly investigated over the last two decades. This allows a systematic analysis of M-Si reactions and suggests that observations on thin film reactions may in some respects differ from those on bulk reactions: sequential appearance of phases, absence of certain phases, very rapid kinetics of formation. The scope of this paper is to review the existing knowledge, to describe the thin films ''peculiarities'' and to tentatively explain them taking into account the specificities of reactive diffusion and the role of the experimental conditions encountered in M-Si thin film reactions (low temperature, high density of interfaces, small thicknesses).
引用
收藏
页码：153 / 161
页数：9
相关论文
共 62 条
  • [31] ISOTOPE-SEPARATION AND GROWTH MECHANISMS OF INTERMETALLIC PHASES - AN INVESTIGATION OF NICKEL SILICIDES BY SECONDARY ION MASS-SPECTROMETRY
    GAS, P
    ZARING, C
    SVENSSON, BG
    OSTLING, M
    PETERSSON, CS
    DHEURLE, FM
    [J]. JOURNAL OF APPLIED PHYSICS, 1990, 67 (05) : 2390 - 2395
  • [32] DIFFUSION OF SB, GA, GE, AND (AS) IN TISI2
    GAS, P
    SCILLA, G
    MICHEL, A
    LEGOUES, FK
    THOMAS, O
    DHEURLE, FM
    [J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (11) : 5335 - 5345
  • [33] GROWTH-KINETICS OF PLANAR BINARY DIFFUSION COUPLES - THIN-FILM CASE VERSUS BULK CASES
    GOSELE, U
    TU, KN
    [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) : 3252 - 3260
  • [34] KINETICS OF TISI2 FORMATION BY THIN TI FILMS ON SI
    HUNG, LS
    GYULAI, J
    MAYER, JW
    LAU, SS
    NICOLET, MA
    [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) : 5076 - 5080
  • [35] CALORIMETRIC AND MICROSTRUCTURAL STUDY OF NICKEL SILICON THIN-FILM REACTIONS
    KNAUTH, P
    CHARAI, A
    ROUX, D
    GAS, P
    BERGMAN, C
    [J]. APPLIED SURFACE SCIENCE, 1991, 53 : 120 - 125
  • [36] KNAUTH P, IN PRESS
  • [37] INTERACTIONS IN CO-SI THIN-FILM SYSTEM .1. KINETICS
    LAU, SS
    MAYER, JW
    TU, KN
    [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 4005 - 4010
  • [38] GROWTH OF CO-SILICIDES FROM SINGLE-CRYSTAL AND EVAPORATED SI
    LIEN, CD
    NICOLET, MA
    PAI, CS
    LAU, SS
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1985, 36 (03): : 153 - 157
  • [39] Martin G., 1975, J PHYSIQUE C, V36, pC4
  • [40] THIN-FILM INTERACTION BETWEEN TITANIUM AND POLYCRYSTALLINE SILICON
    MURARKA, SP
    FRASER, DB
    [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 342 - 349
1234567