FORMATION OF SILICIDE THIN-FILMS BY SOLID-STATE REACTION

被引：57

作者：

GAS, P ^{[1
]}

DHEURLE, FM ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

APPLIED SURFACE SCIENCE | 1993年 / 73卷

关键词：

D O I：

10.1016/0169-4332(93)90160-D

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Because of the practical interest of silicides, the M-Si thin film reaction has been thoroughly investigated over the last two decades. This allows a systematic analysis of M-Si reactions and suggests that observations on thin film reactions may in some respects differ from those on bulk reactions: sequential appearance of phases, absence of certain phases, very rapid kinetics of formation. The scope of this paper is to review the existing knowledge, to describe the thin films ''peculiarities'' and to tentatively explain them taking into account the specificities of reactive diffusion and the role of the experimental conditions encountered in M-Si thin film reactions (low temperature, high density of interfaces, small thicknesses).

引用

页码：153 / 161

页数：9

共 62 条

[1]

ALY EM, 1984, ACTA METALL, V31, P907

[2]

[Anonymous], 1978, EDWARD ARNOLD, DOI DOI 10.1002/MACO.19780290130

[3] COBALT LATTICE DIFFUSION IN BULK COBALT DISILICIDE [J].