FREQUENCY-DEPENDENCE OF POSITRON-ANNIHILATION SIGNAL FROM MOS STRUCTURE

被引：7

作者：

AU, HL ^{[1
]}

ASOKAKUMAR, P ^{[1
]}

BELING, CD ^{[1
]}

FUNG, S ^{[1
]}

LYNN, KG ^{[1
]}

机构：

[1] BROOKHAVEN NATL LAB,UPTON,NY 11973

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1993年 / 178卷 / 01期

关键词：

D O I：

10.1002/pssb.2221780127

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

[No abstract available]

引用

页码：K11 / K15

页数：5

共 8 条

[1]

ASOKAKUMAR P, 1991, PHYS REV B, V44, P11

[2]

BAKER JA, 1988, J PHYS CONDENS MATT, V1, pSB39

[3]

LANG DV, 1974, J APPL PHYS, V45, P7

[4] POSITRON-ANNIHILATION AT THE SI/SIO2 INTERFACE [J].

LEUNG, TC ;

WEINBERG, ZA ;

ASOKAKUMAR, P ;

NIELSEN, B ;

RUBLOFF, GW ;

LYNN, KG .

JOURNAL OF APPLIED PHYSICS, 1992, 71 (01) :530-532

[5]

LEUNG TC, THESIS STATE U NEW Y

[6] SIO2/SI INTERFACE PROBED WITH A VARIABLE-ENERGY POSITRON BEAM [J].

NIELSEN, B ;

LYNN, KG ;

CHEN, YC ;

WELCH, DO .

APPLIED PHYSICS LETTERS, 1987, 51 (13) :1022-1023

[7] INTERACTION OF POSITRON BEAMS WITH SURFACES, THIN-FILMS, AND INTERFACES [J].

SCHULTZ, PJ ;

LYNN, KG .

REVIEWS OF MODERN PHYSICS, 1988, 60 (03) :701-779

[8] METAL-OXIDE-SEMICONDUCTOR INTERFACE INVESTIGATED BY MONOENERGETIC POSITRONS [J].

UEDONO, A ;

TANIGAWA, S ;

OHJI, Y .

PHYSICS LETTERS A, 1988, 133 (1-2) :82-84

← 1 →