INDUCTION-HEATED FURNACE FOR GROWTH OF ALPHA-SILICON CARBIDE CRYSTALS

被引：4

|

作者：

POTTER, RM

SATTELE, JH

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1972年 / 12卷 / 03期

关键词：

D O I：

10.1016/0022-0248(72)90009-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

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页码：245 / &

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