PARAMETER CORRELATION AND MODELING OF THE POWER-LAW RELATIONSHIP IN MOSFET HOT-CARRIER DEGRADATION

被引：22
作者：
SUN, SW
ORLOWSKI, M
FU, KY
机构：
[1] MOTOROLA INC,ADV PROD RES & DEV LAB,TECHNOL SIMULAT GRP,AUSTIN,TX 78721
[2] MOTOROLA INC,TECHNOL ASSESSMENT LAB,AUSTIN,TX 78721
来源：
IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 07期
关键词：
D O I：
10.1109/55.56480
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Correlation between the parameters. A and n in the empirical hot-carrier degradation formula, parametric shift = A -tn, is reported for both n- and p-channel MOSFET's fabricated with various submicrometer processing technologies. Analysis of our data as well of the data reported in the literature indicates that A increases with a decreasing value of n, satisfying a simple exponential relationship, A =αexp (-βn), within the stress conditions considered. A phenomenological model is provided to explain this relation. Implications on device lifetime prediction under different hot-carrier injection (HCl) stress conditions have also been indicated. © 1990 IEEE
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页码：297 / 299
页数：3
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