THE FORMATION OF EPITAXIAL COSI2 THIN-FILMS ON (001) SI FROM AMORPHOUS CO-W ALLOYS

被引：14

作者：

READER, AH ^{[1
]}

DUCHATEAU, JPWB ^{[1
]}

CROMBEEN, JE ^{[1
]}

NABURGH, EP ^{[1
]}

SOMERS, MAJ ^{[1
]}

机构：

[1] DELFT UNIV TECHNOL,MET LAB,2628 AL DELFT,NETHERLANDS

来源：

APPLIED SURFACE SCIENCE | 1991年 / 53卷

关键词：

D O I：

10.1016/0169-4332(91)90248-I

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A novel way of forming predominantly epitaxial CoSi2 on (001) Si from an amorphous Co-W alloy layer on Si is explained. Auger electron spectroscopy depth profiling, Rutherford backscattering spectrometry and X-ray diffraction have been used to investigate the interaction between the amorphous alloy and Si. An alloy composition of Co60W40 was chosen which has a crystallization temperature of about 850-degrees-C. By employing anneals below 600-degrees-C, Co diffuses out of the alloy into the substrate to form CoSi2. After the anneal, the remaining amorphous alloy could be selectively removed from the underlying CoSi2 film by wet-chemical etching. X-ray diffraction measurements indicated that about 75% of the disilicide film has an epitaxial relationship with the Si substrate while the other 25% has a simple twin relation with the majority of the material. The formation mechanism of CoSi2 from an amorphous alloy on Si is discussed.

引用

页码：92 / 102

页数：11

共 21 条

[11] ELECTRONIC-STRUCTURE AND PROPERTIES OF COSI2 [J].