A NEW DIELECTRIC ISOLATION METHOD USING POROUS SILICON

被引：131

作者：

IMAI, K

机构：

来源：

SOLID-STATE ELECTRONICS | 1981年 / 24卷 / 02期

关键词：

D O I：

10.1016/0038-1101(81)90012-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：159 / &

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