ALKALI-DEVELOPABLE SILICON CONTAINING POSITIVE PHOTORESIST (ASTRO) FOR A 2-LAYER RESIST SYSTEM - PREPARATION AND PROCESSING

被引：16

作者：

TORIUMI, M ^{[1
]}

SHIRAISHI, H ^{[1
]}

UENO, T ^{[1
]}

HAYASHI, N ^{[1
]}

NONOGAKI, S ^{[1
]}

SATO, F ^{[1
]}

KADOTA, K ^{[1
]}

机构：

[1] HITACHI LTD,MUSASHI WORKS,KODAIRA,TOKYO 187,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 04期

关键词：

POLYMERS - Applications - SILICON AND ALLOYS - Applications;

D O I：

10.1149/1.2100598

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A new positive photoresist containing silicon (ASTRO) has been developed as a top-layer resist for two-layer resist systems. The resist is composed of cresol novolac resin, naphthoquinone diazide, and poly(phenylsilsesquioxane). The smallest molecular weight component of poly(phenylsilsesquioxane) is cis-(1,3,5,7-tetrahydroxy)-1,3,5,7-tetraphenylcyclotetrasilo xane which controls the resist solubility in an alkaline aqueous solution. It has been found that ASTRO has good resolution capabilities (0. 8 mu m when exposed at 436 nm) and good resistance to oxygen reactive ion etching.

引用

页码：936 / 939

页数：4

共 18 条

[1] POLYCONDENSATION OF PHENYLSILANETRIOL [J].