FORMATION OF DOUBLE THERMAL DONORS IN CZ-SI WITH DIFFERENT OXYGEN CONCENTRATIONS

The dependence of the initial rate of formation of thermal double donors in silicon grown by the Czochralski method (Cz-Si) on the initial oxygen concentration N(oxy)0 has been studied. Annealing took place at a temperature of 450-degrees-C. An analysis of the data obtained by us and the published data has shown that the donor formation rate depends in different ways on N(oxy)0 at different oxygen concentrations. At low values of N(oxy)0 (less than or similar to 8 X 10(17) cm-3) the rate of formation of thermal donors increases nearly linearly with N(oxy)0, but in the range N(oxy)0 greater than or similar to 8 X 10(17) cm-3 it is proportional to (N(oxy)0. This effect could be attributed to a change in the nature of the distribution of oxygen, which occurs in the original materials near the critical oxygen concentration of about 7 X 10(17) cm-3.