PD-THIN-SIO2-SI DIODE .1. ISOTHERMAL VARIATION OF H2-INDUCED INTERFACIAL TRAPPING STATES

被引：61

作者：

KERAMATI, B ^{[1
]}

ZEMEL, JN ^{[1
]}

机构：

[1] UNIV PENN, MOORE SCH ELECT ENGN, CTR CHEM ELECTR, DEPT ELECT ENGN & SCI, PHILADELPHIA, PA 19104 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 02期

关键词：

D O I：

10.1063/1.330521

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1091 / 1099

页数：9

共 47 条

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