WETTING AT THE GRAIN-BOUNDARY IN THE PLANAR ISING-MODEL

被引：2

作者：

TODOROVIC, D ^{[1
]}

SVRAKIC, NM ^{[1
]}

机构：

[1] INST PHYS, YU-11001 BELGRADE, YUGOSLAVIA

来源：

ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER | 1992年 / 87卷 / 03期

关键词：

D O I：

10.1007/BF01309288

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In this paper the conditions of pinning of an interface in a 2D Ising ferromagnet with defect connections in a solid-on-solid (SOS) limit are given. It is known that in this case the localisation of interface is formally equivalent to the bound state of quantum particle in temperature dependent effective potential. We show that a wetting transition occurs whenever the couplings on the two sides of the defect are different.

引用

页码：355 / 358

页数：4

共 27 条

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