SUBBAND EFFECTS ON HIGH-FIELD ELECTRON-TRANSPORT IN QUASI-ONE-DIMENSIONAL SYSTEMS

被引:9
作者
WANG, XF
LEI, XL
机构
[1] Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai
来源
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1993年 / 175卷 / 02期
关键词
D O I
10.1002/pssb.2221750215
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
A detailed calculation of electron transport in AlxGa1-xAs/GaAs quantum wires by the use of a balance-equation approach, considering all possible acoustic and optical phonon scattering and taking fifteen subbands into account, is reported. Crossover from one dimension (1D) to three dimensions (3D) in both low- and high-field regimes is studied by investigating mobility and electron temperature as functions of the radius of quantum wire. At low temperatures, the linear mobility of a quasi-1D electron system may be ten times higher or ten times lower than that of a 3D system depending on the relative position of the Fermi energy to subbands. At very high electric field, the difference in the transport behavior of quantum wires with differing radii and that of a 3D system disappears as a result of high electron temperature and drift velocity.
引用
收藏
页码:433 / 443
页数:11
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